By Francoise von Trapp On Sep. 15, 2009
Up until recently, the only available methodologies for performing necessary metallization steps for fabricating through-silicon vias (TSVs) relied on conventional dry processes like physical vapor deposition (PVD), chemical vapor deposition (CVD) and atomic layer deposition (ALD). These processes each have weaknesses such as low throughput and high cost. In July 2009, Alchimer S.A. Read More>>
By Francoise von Trapp On Oct. 14, 2010
Much of the manufacturing equipment, processes, modeling and simulation tools, and materials being investigated for 3D IC integration technologies were first developed for MEMS fabrication and packaging. This discussion will examine how advancement of MEMS manufacturing processes help further the advancement of 3D IC and vice-versa.  We will look at synergies in the supply chain and discuss how Read More>>
By Francoise von Trapp On Feb. 04, 2010
Join 3D InCites from February 8-12, 2010, as we discuss opportunities for enhancing system performance using through silicon via (TSV) technology with Madhavan Swaminathan, Gene Jakubowski and Bill Martin, the executive team of E-System Design, a company focusing on the development of CAD tools for Read More>>
By Francoise von Trapp On Oct. 06, 2009
As the feasibility of TSVs has been well established in the semiconductor industry, the focus has now shifted to the manufacturability and integration of all the different building blocks for TSVs and 3D Interconnects. At this year’s IMAPS International 2009, Nov 1-5 , San Jose CA, Dr. Thorsten Matthias, Director of Technology, EVG North America. Read More>>
By Francoise von Trapp On Apr. 21, 2010
By design, MEMS devices are already 3D stuctures, so when we talk about 3D MEMS, we’re actually talking about the integration of ICs and multiple MEMS sensors in the third dimension to create advanced “smart” systems. Read More>>